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| SI3915DV New Product Vishay Siliconix Dual P-Channel 12-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.120 @ VGS = -4.5 V -12 12 0.175 @ VGS = -2.5 V 0.240 @ VGS = -1.8 V ID (A) -2.5 -2.0 -1.7 S1 S2 TSOP-6 Top View G1 1 6 D1 G1 3 mm S2 2 5 S1 G2 G2 3 4 D2 2.85 mm D1 P-Channel MOSFET D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a 150 C) Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C ID TA = 70_C IDM IS PD TJ, Tstg -1.05 1.15 0.73 -55 to 150 -2.0 -7 -0.75 0.83 W 0.53 _C -1.7 A Symbol VDS VGS 5 secs Steady State -12 "8 Unit V -2.5 -2.0 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 71299 S-01890--Rev. A, 28-Aug-00 www.vishay.com t v 5 sec Steady State Steady State Symbol RthJA RthJF Typical 93 130 75 Maximum 110 150 90 Unit _C/W 1 SI3915DV Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "8 V VDS = -9.6 V, VGS = 0 V VDS = -9.6 V, VGS = 0 V, TJ = 55_C VDS p -5 V, VGS = -4.5 V VGS = -4.5 V, ID = -2.5 A Drain-Source On-State Resistancea DiS OS Ri rDS(on) VGS = -2.5 V, ID = -2.0 A VGS = -1.8 V, ID = -1 A Forward Transconductancea Diode Forward Voltagea gfs VSD VDS = -4.5 V, ID = -2.5 A IS = -1.05 A, VGS = 0 V -5 0.100 0.142 0.200 5.3 -0.79 -1.1 0.120 0.175 0.240 S V W -0.45 "100 -1 -5 V nA mA A Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = -1.05 A, di/dt = 100 A/ms VDD = -6 V, RL = 6 W 6 V, ID ^ -1 A, VGEN = -4.5 V RG = 6 W 1A 4 5 V, VDS = -6 V, VGS = -4.5 V ID = -2.5 A 6V 4 5 V, 25 5 1.1 1.1 15 42 33 32 20 25 65 50 50 40 ns 7.5 nC C Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 7 6 5 4 3 1.5 V 2 1 0 0 1 2 3 4 5 VGS = 5 thru 2.5 V 7 6 5 4 3 2 1 0 0 0.5 Transfer Characteristics TC = -55_C 25_C I D - Drain Current (A) I D - Drain Current (A) 2.0 V 125_C 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) www.vishay.com 2 Document Number: 71299 S-01890--Rev. A, 28-Aug-00 SI3915DV New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.6 800 Vishay Siliconix Capacitance r DS(on) - On-Resistance ( W ) 0.5 C - Capacitance (pF) 640 Ciss 480 0.4 0.3 VGS = 1.8 V VGS = 2.5 V 320 Coss 160 Crss 0 0.2 0.1 VGS = 4.5 V 0 0 1 2 3 4 5 6 7 0 3 6 9 12 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 5 V GS - Gate-to-Source Voltage (V) VDS = 6 V ID = 2.5 A 1.6 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 2.5 A 3 r DS(on) - On-Resistance (W) (Normalized) 2 3 4 5 6 4 1.4 1.2 2 1.0 1 0.8 0 0 1 0.6 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 10 0.5 On-Resistance vs. Gate-to-Source Voltage r DS(on)- On-Resistance ( W ) 0.4 ID = 2.5 A 0.3 ID = 1 A 0.2 I S - Source Current (A) TJ = 150_C 1 TJ = 25_C 0.1 0.1 0.00 0.3 0.6 0.9 1.2 1.5 0 0 1 2 3 4 5 6 VSD - Source-to-Drain Voltage (V) Document Number: 71299 S-01890--Rev. A, 28-Aug-00 VGS - Gate-to-Source Voltage (V) www.vishay.com 3 SI3915DV Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.3 ID = 250 mA 0.2 V GS(th) Variance (V) 6 8 Single Pulse Power, Junction-to-Ambient 0.1 Power (W) 4 0.0 2 -0.1 -0.2 -50 0 -25 0 25 50 75 100 125 150 0.01 0.1 Time (sec) 1 10 30 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 130_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (sec) 2 1 Duty Cycle = 0.5 Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 4 Document Number: 71299 S-01890--Rev. A, 28-Aug-00 |
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